| PART |
Description |
Maker |
| STK404-090S |
Single-channel AF Power Amplifiers
|
SANYO
|
| STK404-140S |
Single-channel AF Power Amplifiers
|
SANYO
|
| MAX9717 MAX9717AEUA MAX9717BEUA MAX9716 MAX9716EBL |
Low-Cost, Mono, 1.4W BTL Audio Power Amplifiers 1.4 W, 1 CHANNEL, AUDIO AMPLIFIER, DSO8
Low-Cost, Mono, 1.4W BTL Audio Power Amplifiers 低成本，单声道，1.4W输出功率桥接音频功率放大
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| AAT1168 AAT1168-Q5-T AAT1168A AAT1168A-Q5-T AAT116 |
TRIPLE-CHANNEL TFT LCD POWER SOLUTION WITH OPERATIONAL AMPLIFIERS
|
Advanced Analog Technology, Inc.
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| TDA8510 TDA8510J TDA8510J/N2 |
26 W BTL and 2 x 13 W SE power amplifiers 26糯桥接和2 x 13 W功率东南功率放大
TDA8510J; 26 W BTL and 2 x 13 W SE power amplifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| U5T12.12.5 R5T12.2.5 U28S15.45 U28S24.4 R28D15.22 |
Low power quad operational amplifiers
High power 3-phase auxiliary power supply evaluation board based on L5991 and ESBT STC08DE150HV
Evaluation board using 1x SD3932 for HF transmitters
VIPer12A travel adaptor 3.6W output
Analog IC 模拟IC
RF power amplifier using 1 x PD55008 N-channel enhancement-mode lateral MOSFETs 模拟IC
RF power amplifier using 1 x PD55008L 模拟IC
|
Electronic Theatre Controls, Inc.
KEMET Corporation
Bourns, Inc.
MITSUMI ELECTRIC CO., LTD.
|
| MAX4258ESA MAX4258EUA MAX4259EEE MAX4259ESD MAX415 |
350MHz/250MHz / 2-Channel Video Multiplexer-Amplifiers
From old datasheet system
350MHz/250MHz 2-Channel Video Multiplexer-Amplifiers
350MHz/250MHz, 2-Channel Video Multiplexer-Amplifiers
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
MOTOROLA[Motorola, Inc]
|
